FDMC86012 Datasheet and Replacement

October 2012FDMC86012N-Channel Power Trench MOSFET 30 V, 88 A, 2.7 mFeatures General Description Max rDS(on) = 2.7 m at VGS = 4.5 V, ID = 23 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 4.7 m at VGS = 2.5 V, ID = 17.5 AMOSFET construction, the various components of gate charge High p

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

September 2014FDMC86160N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m

May 2010FDMC86324N-Channel Power Trench MOSFET 80 V, 20 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 Abeen especially tailored to minimize the on-state resistance and Low Profile - 1 mm

July 2008FDMC8651N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 mFeatures General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 AMOSFET construction, the various components of gate charge Low Profi

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof

July 2010FDMC86240N-Channel Power Trench MOSFET 150 V, 16 A, 51 mFeatures General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and Low Profile -

April 2011FDMC86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 Athat has been special tailored to minimize the on-state HBM ESD prot

December 2010FDMC86106LZN-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state HBM E

December 2010FDMC8622N-Channel Power Trench MOSFET 100 V, 16 A, 56 mFeatures General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 3 Abeen optimized for rDS(on), switching performance and High performance trench t

January 2015FDMC86570LET60N-Channel Shielded Gate PowerTrench MOSFET60 V, 87 A, 4.3 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 m at VGS = 10

November 2013FDMC86116LZN-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 Athat incorporates Shielded Gate technology. This process has Max r

January 2015FDMC86340ET80N-Channel Shielded Gate Power Trench MOSFET80 V, 68 A, 6.5 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

September 2012FDMC86248N-Channel Power Trench MOSFET 150 V, 13 A, 90 mFeatures General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 Abeen especially tailored to minimize the on-state resistance and Advance

July 2009FDMC86102N-Channel Power Trench MOSFET 100 V, 20 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 Abeen especially tailored to minimize the on-state resistance and Low Profile -

January 2015FDMC86160ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 43 A, 14 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Shielded Gate MOSFET Technologyincorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,

December 2012FDMC86260N-Channel Power Trench MOSFET 150 V, 16 A, 34 mFeatures General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 Abeen especially tailored to minimize the on-state resistance and High perf

January 2014FDMC86340N-Channel Shielded Gate Power Trench MOSFET80 V, 48 A, 6.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 10 V, ID = 14 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 8.5 m

July 2009FDMC8678StmN-Channel Power Trench SyncFETTM 30V, 18A, 5.2mFeatures General Description Max rDS(on) = 5.2m at VGS = 10V, ID = 15A The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 8.7m at VGS = 4.5V, ID = 12Aand package technologies have been combined to offer the Advanced Pack

October 2010FDMC86244N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 Abeen especially tailored to minimize the on-state resistance and Low Pr

June 2014FDMC86139PP-Channel PowerTrench MOSFET -100 V, -15 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 89 m at VGS = -6 V, ID = -3.6 Avery high density process is especially tailored to minimize Very low RDS-

August 2011FDMC86520LN-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mFeatures General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aringing of DC/DC converters using either synchronous or Low P

September 2012FDMC86520DCN-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.3 m at VGS = 10 V, ID = 17 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 m

January 2015FDMC86260ET150N-Channel Power Trench MOSFET150 V, 25 A, 34 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 Abeen especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at

December 2007FDMC8676tmN-Channel PowerTrench MOSFET 30V, 18A, 5.9mFeatures General Description Max rDS(on) = 5.9m at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3m at VGS = 4.5V, ID = 11.5AMOSFET construction, the various components of gate charge Low Prof

February 2014FDMC86259PP-Channel PowerTrench MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 Abeen especially tailored to minimize the on-state resistance and Very l

June 2014FDMC86261PP-Channel PowerTrench MOSFET -150 V, -9 A, 160 mFeatures General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 Avery high density process is especially tailored to minimize Very low RD

April 2015FDMC86262PP-Channel PowerTrench MOSFET-150 V, -2 A, 307 mFeatures General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 ASemiconductors advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 Avery high density process is especially tailored to minimize on-state resis

June 2014FDMC86320N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or MSL1 robust

May 2013FDMC86570LN-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 mFeatures Shielded Gate MOSFET TechnologyGeneral Description Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 4.5 V, ID = 15 Aincorporates Shielded Gate technolo

May 2014FDMC86265PP-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 Ahas been optimized for the on-state resistance and yet maintain Very low RDS-on mid

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMC8651General DescriptionN-Channel Power Trench MOSFETThis device has been designed specifically to improve the 30 V, 20 A, 6.1 mefficiency of DC/DC converters. Using new techniques in FeaturesMOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 Alosses. Low g

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMC86520LN-Channel Power Trench MOSFET60 V, 22 A, 7.9 mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aconventional switchi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur