FDMC86012 - описание и поиск аналогов

October 2012 FDMC86012 N-Channel Power Trench MOSFET 30 V, 88 A, 2.7 m Features General Description Max rDS(on) = 2.7 m at VGS = 4.5 V, ID = 23 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 4.7 m at VGS = 2.5 V, ID = 17.5 A MOSFET construction, the various components of gate charge High p

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

September 2014 FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 14 m at VGS = 10 V, ID = 9 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 23 m

May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

July 2008 FDMC8651 N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 m Features General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 A MOSFET construction, the various components of gate charge Low Profi

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Prof

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m Features General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile -

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD prot

December 2010 FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 m Features General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state HBM E

December 2010 FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m Features General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 3 A been optimized for rDS(on), switching performance and High performance trench t

January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench MOSFET 60 V, 87 A, 4.3 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 m at VGS = 10

November 2013 FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A that incorporates Shielded Gate technology. This process has Max r

January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

September 2012 FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 m Features General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile -

January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 m at VGS = 10 V,

December 2012 FDMC86260 N-Channel Power Trench MOSFET 150 V, 16 A, 34 m Features General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf

July 2009 FDMC8678S tm N-Channel Power Trench SyncFETTM 30V, 18A, 5.2m Features General Description Max rDS(on) = 5.2m at VGS = 10V, ID = 15A The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 8.7m at VGS = 4.5V, ID = 12A and package technologies have been combined to offer the Advanced Pack

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Pr

June 2014 FDMC86139P P-Channel PowerTrench MOSFET -100 V, -15 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 89 m at VGS = -6 V, ID = -3.6 A very high density process is especially tailored to minimize Very low RDS-

August 2011 FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 m Features General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or Low P

September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.3 m at VGS = 10 V, ID = 17 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 m

January 2015 FDMC86260ET150 N-Channel Power Trench MOSFET 150 V, 25 A, 34 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at

December 2007 FDMC8676 tm N-Channel PowerTrench MOSFET 30V, 18A, 5.9m Features General Description Max rDS(on) = 5.9m at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3m at VGS = 4.5V, ID = 11.5A MOSFET construction, the various components of gate charge Low Prof

February 2014 FDMC86259P P-Channel PowerTrench MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 A been especially tailored to minimize the on-state resistance and Very l

June 2014 FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m Features General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD

April 2015 FDMC86262P P-Channel PowerTrench MOSFET -150 V, -2 A, 307 m Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 A Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis

June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

May 2013 FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m Features Shielded Gate MOSFET Technology General Description Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 6.5 m at VGS = 4.5 V, ID = 15 A incorporates Shielded Gate technolo

May 2014 FDMC86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMC8651 General Description N-Channel Power Trench MOSFET This device has been designed specifically to improve the 30 V, 20 A, 6.1 m efficiency of DC/DC converters. Using new techniques in Features MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A losses. Low g

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 m General Description Features This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A conventional switchi

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur