All MOSFET. FDME430NT Datasheet

 

FDME430NT Datasheet and Replacement


   Type Designator: FDME430NT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: UMLP1.6X1.6
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FDME430NT Datasheet (PDF)

 ..1. Size:238K  fairchild semi
 fdme430nt.pdf pdf_icon

FDME430NT

October 2013FDME430NTN-Channel PowerTrench MOSFET 30 V, 6 A, 40 mFeatures General DescriptionThis single N-Channel MOSFET has been designed using Max rDS(on) = 40 m at VGS = 4.5 V, ID = 6 AFairchild Semiconductors advanced PowerTrench process to Max rDS(on) = 51 m at VGS = 2.5 V, ID = 5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 71 m

 9.1. Size:299K  fairchild semi
 fdme410nzt.pdf pdf_icon

FDME430NT

February 2010FDME410NZTN-Channel PowerTrench MOSFET 20 V, 7 A, 26 mFeatures General DescriptionThis Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 AFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 Aoptimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39

Datasheet: FCP600N60Z , FCPF600N60Z , FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 , IRFB4227 , FDMS8090 , FDP030N06BF102 , FDI9406F085 , FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L .

History: NCEP85T12D | BSB280N15NZ3G | 12N65KG-TF1-T | IRFR3607 | R5016ANJ | ELM13401CA | DH150N12B

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