HUF75545S3S Datasheet. Specs and Replacement

Type Designator: HUF75545S3S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO263AB

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HUF75545S3S datasheet

 ..1. Size:270K  fairchild semi
 huf75545p3 huf75545s3 huf75545s3s.pdf pdf_icon

HUF75545S3S

HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE Ultra Low On-Resistance - rDS(ON) = 0.010 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER DRAIN Electrical Models (FLANG... See More ⇒

 ..2. Size:805K  onsemi
 huf75545p3 huf75545s3s.pdf pdf_icon

HUF75545S3S

HUF75545P3, HUF75545S3S Data Sheet October 2013 N-Channel UltraFET Power MOSFET 80 V, 75 A, 10 m Features Packaging Ultra Low On-Resistance - rDS(ON) = 0.010 , VGS = 10V JEDEC TO-220AB JEDEC TO-263AB DRAIN Simulation Models SOURCE (FLANGE) DRAIN - Temperature Compensated PSPICE and SABER GATE Electrical Models GATE - Spice and SABER Thermal Impedance Models... See More ⇒

 0.1. Size:267K  fairchild semi
 huf75545s3 huf75545s3st.pdf pdf_icon

HUF75545S3S

HUF75545P3, HUF75545S3, HUF75545S3S Data Sheet September 2002 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN Features SOURCE (FLANGE) DRAIN GATE Ultra Low On-Resistance - rDS(ON) = 0.010 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER DRAIN Electrical Models (FLANG... See More ⇒

 7.1. Size:192K  fairchild semi
 huf75542p3-s3s.pdf pdf_icon

HUF75545S3S

HUF75542P3, HUF75542S3S Data Sheet December 2001 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance GATE - rDS(ON) = 0.014 , VGS = 10V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Model... See More ⇒

SHOW MORE

Detailed specifications: HUF75343S3S, HUF75344G3, HUF75344P3, HUF75344S3S, HUF75345G3, HUF75345P3, HUF75345S3S, HUF75545P3, 7N60, HUF75623P3, HUF75631P3, HUF75631SK8, HUF75637P3, HUF75637S3S, HUF75639G3, HUF75639P3, HUF75639S3S

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