FCD900N60Z PDF and Equivalents Search

 

FCD900N60Z Specs and Replacement

Type Designator: FCD900N60Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.3 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

FCD900N60Z substitution

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FCD900N60Z datasheet

 ..1. Size:608K  fairchild semi
 fcd900n60z.pdf pdf_icon

FCD900N60Z

December 2013 FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 820 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 13 nC) and lo... See More ⇒

 ..2. Size:849K  onsemi
 fcd900n60z.pdf pdf_icon

FCD900N60Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDD770N15A , FDMS8820 , FDMS8320LDC , HUF76639SF085 , FDB38N30U , FDB070AN06F085 , FDD1600N10ALZ , FCD380N60E , IRFP260 , FCD600N60Z , FDD1600N10ALZD , FDD850N10LD , FCH072N60F , FDMB2308PZ , FDMS3669S , FDZ1323NZ , FDPC8012S .

Keywords - FCD900N60Z MOSFET specs

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