All MOSFET. FCD900N60Z Datasheet

 

FCD900N60Z Datasheet and Replacement


   Type Designator: FCD900N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO252
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FCD900N60Z Datasheet (PDF)

 ..1. Size:608K  fairchild semi
 fcd900n60z.pdf pdf_icon

FCD900N60Z

December 2013FCD900N60ZN-Channel SuperFET II MOSFET600 V, 4.5 A, 900 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 820 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 13 nC)and lo

 ..2. Size:849K  onsemi
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FCD900N60Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PTP08N65 | MMBF5457 | 2N3797 | 2SK3889-01L | IPD90N06S4-05 | AONS66615 | AP9962AGM

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