FDPC8012S MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDPC8012S
   Marking Code: 01OD_03OD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PQFN3.3X3.3

FDPC8012S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDPC8012S Datasheet (PDF)

..1. Size:556K fairchild semi
fdpc8012s.pdf

October 2014FDPC8012SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 12 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. Th

..2. Size:654K onsemi
fdpc8012s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:362K fairchild semi
fdpc8016s.pdf

October 2013FDPC8016SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS

7.2. Size:407K fairchild semi
fdpc8014s.pdf

April 2014FDPC8014SPowerTrench Power Clip25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS = 4

7.3. Size:633K fairchild semi
fdpc8011s.pdf

October 2014FDPC8011SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.3 m at VGS = 4.5 V, ID = 12 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. Th

7.4. Size:486K fairchild semi
fdpc8013s.pdf

October 2014FDPC8013SPowerTrench Power Clip 30 V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 9.6 m at VGS = 4.5 V, ID = 10 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. T

7.5. Size:289K onsemi
fdpc8016s.pdf

MOSFET - Dual NChannel,Asymmetric,POWERTRENCH) PowerClip 25 VFDPC8016Swww.onsemi.comGeneral DescriptionELECTRICAL CONNECTIONThis device includes two specialized N-Channel MOSFETs in adual package. The switch node has been internally connected to enableeasy placement and routing of synchronous buck converters. Thecontrol MOSFET (Q1) and synchronous SyncFET (Q2) have b

7.6. Size:602K onsemi
fdpc8014as.pdf

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

7.7. Size:679K onsemi
fdpc8011s.pdf