FDPC8012S. Аналоги и основные параметры
Наименование производителя: FDPC8012S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 250 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: PQFN3.3X3.3
Аналог (замена) для FDPC8012S
- подборⓘ MOSFET транзистора по параметрам
FDPC8012S даташит
fdpc8012s.pdf
October 2014 FDPC8012S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 12 A enable easy placement and routing of synchronous buck Q2 N-Channel converters. Th
fdpc8012s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpc8016s.pdf
October 2013 FDPC8016S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 A enable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS
fdpc8014s.pdf
April 2014 FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 A enable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS = 4
Другие MOSFET... FCD900N60Z , FCD600N60Z , FDD1600N10ALZD , FDD850N10LD , FCH072N60F , FDMB2308PZ , FDMS3669S , FDZ1323NZ , 5N65 , FDMS86152 , FDN537N , FDB9406F085 , FDD120AN15F085 , FDPC4044 , FDMC8360L , FDMC86340 , FDMC86570L .
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Список транзисторов
Обновления
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