HUF75631SK8 Datasheet. Specs and Replacement

Type Designator: HUF75631SK8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: MS012AA

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HUF75631SK8 datasheet

 ..1. Size:254K  fairchild semi
 huf75631sk8.pdf pdf_icon

HUF75631SK8

HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.039 , VGS = 10V 5 Simulation Models 1 - Temperature Compensated PSPICE and SABER 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol ... See More ⇒

 0.1. Size:249K  fairchild semi
 huf75631sk8t.pdf pdf_icon

HUF75631SK8

HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.039 , VGS = 10V 5 Simulation Models 1 - Temperature Compensated PSPICE and SABER 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol ... See More ⇒

 5.1. Size:202K  fairchild semi
 huf75631s3s.pdf pdf_icon

HUF75631SK8

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice an... See More ⇒

 5.2. Size:200K  fairchild semi
 huf75631s3st.pdf pdf_icon

HUF75631SK8

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice an... See More ⇒

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Detailed specifications: HUF75344S3S, HUF75345G3, HUF75345P3, HUF75345S3S, HUF75545P3, HUF75545S3S, HUF75623P3, HUF75631P3, IRF830, HUF75637P3, HUF75637S3S, HUF75639G3, HUF75639P3, HUF75639S3S, HUF75645P3, HUF75645S3S, HUF75652G3

Keywords - HUF75631SK8 MOSFET specs

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