All MOSFET. HUF76419SF085 Datasheet

 

HUF76419SF085 Datasheet and Replacement


   Type Designator: HUF76419SF085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO263 D2PAK
 

 HUF76419SF085 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HUF76419SF085 Datasheet (PDF)

 5.1. Size:321K  fairchild semi
 huf76419s f085.pdf pdf_icon

HUF76419SF085

April 2013HUF76419S3ST_F085N-Channel Power Trench MOSFET60V, 29A, 35m DDFeatures Typ rDS(on) = 26.7m at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSMOSFET Maximum Ratings TJ = 25C unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain to Source Voltage 60 V

 5.2. Size:213K  fairchild semi
 huf76419s3st.pdf pdf_icon

HUF76419SF085

HUF76419P3, HUF76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

 6.1. Size:196K  fairchild semi
 huf76419d3st.pdf pdf_icon

HUF76419SF085

HUF76419D3, HUF76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER G

 6.2. Size:220K  fairchild semi
 huf76419p3-s3s.pdf pdf_icon

HUF76419SF085

HUF76419P3, HUF76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

SHOW MORE

Datasheet: FDPC4044 , FDMC8360L , FDMC86340 , FDMC86570L , FDN371N , FCH104N60F , FDMS86350 , FDU6N25 , 10N65 , FDMS86252L , FDMS86550 , FDMA908PZ , FDS6679 , FCD620N60ZF , FDMS3660AS , FDMS86202 , FQPF2N80YDTU .

History: SMK0460IS | SST2605 | PSA06N40 | FQPF17N40T | SFS9540 | 2SK2440 | NTMS4873NFR2G

Keywords - HUF76419SF085 MOSFET datasheet

 HUF76419SF085 cross reference
 HUF76419SF085 equivalent finder
 HUF76419SF085 lookup
 HUF76419SF085 substitution
 HUF76419SF085 replacement

 

 
Back to Top

 


 
.