HUF76419SF085 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HUF76419SF085
   Marking Code: 76419S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 28.5 nC
   trⓘ - Rise Time: 7.3 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO263 D2PAK

HUF76419SF085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF76419SF085 Datasheet (PDF)

5.1. Size:321K fairchild semi
huf76419s f085.pdf

April 2013HUF76419S3ST_F085N-Channel Power Trench MOSFET60V, 29A, 35m DDFeatures Typ rDS(on) = 26.7m at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSMOSFET Maximum Ratings TJ = 25C unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain to Source Voltage 60 V

5.2. Size:213K fairchild semi
huf76419s3st.pdf

HUF76419P3, HUF76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

6.1. Size:196K fairchild semi
huf76419d3st.pdf

HUF76419D3, HUF76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER G

6.2. Size:220K fairchild semi
huf76419p3-s3s.pdf