HUF76419SF085 - описание и поиск аналогов

April 2013 HUF76419S3ST_F085 N-Channel Power Trench MOSFET 60V, 29A, 35m D D Features Typ rDS(on) = 26.7m at VGS = 10V, ID = 29A Typ Qg(tot) = 23.7nC at VGS = 10V, ID = 29A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263AB S MOSFET Maximum Ratings TJ = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V

HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER G

HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.035 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.040 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Elect

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.037 , VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043 , VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER G