All MOSFET. FDMA8051L Datasheet

 

FDMA8051L Datasheet and Replacement


   Type Designator: FDMA8051L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.8 nS
   Cossⓘ - Output Capacitance: 251 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: MLP2X2
 

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FDMA8051L Datasheet (PDF)

 ..1. Size:359K  fairchild semi
fdma8051l.pdf pdf_icon

FDMA8051L

January 2014FDMA8051LSingle N-Channel PowerTrench MOSFET40 V, 10 A, 14 mFeatures General Description Max rDS(on) = 14 m at VGS = 10 V, ID = 10 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 18 m at VGS = 4.5 V, ID = 8.5 Alow rDS(on) and gate charge provide excellent switching per

 9.1. Size:505K  fairchild semi
fdma86251.pdf pdf_icon

FDMA8051L

March 2015FDMA86251Single N-Channel PowerTrench MOSFET150 V, 2.4 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 Alow rDS(on) and gate charge provide excellent switching

 9.2. Size:383K  fairchild semi
fdma8884.pdf pdf_icon

FDMA8051L

May 2014FDMA8884Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trenc

 9.3. Size:449K  fairchild semi
fdma86108lz.pdf pdf_icon

FDMA8051L

March 2015FDMA86108LZSingle N-Channel PowerTrench MOSFET100 V, 2.2 A, 243 mFeatures General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 Alow rDS(on) and gate charge provide excellent switching

Datasheet: FCP190N60GF102 , FDB42AN15F085 , FDPF7N50U , FQP2N40 , FCP104N60F , FCH47N60FF085 , FDMC8032L , NDS351N , AO3401 , FDMA86551L , FDMC612PZ , FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 .

History: SMN0665FD

Keywords - FDMA8051L MOSFET datasheet

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