January 2014FDMA8051LSingle N-Channel PowerTrench MOSFET40 V, 10 A, 14 mFeatures General Description Max rDS(on) = 14 m at VGS = 10 V, ID = 10 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 18 m at VGS = 4.5 V, ID = 8.5 Alow rDS(on) and gate charge provide excellent switching per

March 2015FDMA86251Single N-Channel PowerTrench MOSFET150 V, 2.4 A, 175 mFeatures General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 Alow rDS(on) and gate charge provide excellent switching

May 2014FDMA8884Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 Abeen optimized for rDS(on) switching performance. High performance trenc

March 2015FDMA86108LZSingle N-Channel PowerTrench MOSFET100 V, 2.2 A, 243 mFeatures General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 Alow rDS(on) and gate charge provide excellent switching

September 2014FDMA86151LSingle N-Channel PowerTrench MOSFET100 V, 3.3 A, 88 mFeatures General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 Alow rDS(on) and gate charge provide excellent switchin

May 2014FDMA8878Single N-Channel Power Trench MOSFET30 V, 9.0 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 19 m at VGS = 4.5 V, ID = 8.5 Abeen optimized for rDS(on), switching performance. High performance trenc

May 2014FDMA86265PP-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 Ahas been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m

October 2014FDMA86551LSingle N-Channel PowerTrench MOSFET60 V, 7.5 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.5 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6 Alow rDS(on) and gate charge provide excellent switching L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur