FDMA8051L - описание и поиск аналогов

January 2014 FDMA8051L Single N-Channel PowerTrench MOSFET 40 V, 10 A, 14 m Features General Description Max rDS(on) = 14 m at VGS = 10 V, ID = 10 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 18 m at VGS = 4.5 V, ID = 8.5 A low rDS(on) and gate charge provide excellent switching per

March 2015 FDMA86251 Single N-Channel PowerTrench MOSFET 150 V, 2.4 A, 175 m Features General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 A low rDS(on) and gate charge provide excellent switching

May 2014 FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trenc

March 2015 FDMA86108LZ Single N-Channel PowerTrench MOSFET 100 V, 2.2 A, 243 m Features General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 A low rDS(on) and gate charge provide excellent switching

September 2014 FDMA86151L Single N-Channel PowerTrench MOSFET 100 V, 3.3 A, 88 m Features General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 A low rDS(on) and gate charge provide excellent switchin

May 2014 FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 19 m at VGS = 4.5 V, ID = 8.5 A been optimized for rDS(on), switching performance. High performance trenc

May 2014 FDMA86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m

October 2014 FDMA86551L Single N-Channel PowerTrench MOSFET 60 V, 7.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.5 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6 A low rDS(on) and gate charge provide excellent switching L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur