FCH47N60F085 Datasheet and Replacement
Type Designator: FCH47N60F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 3200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: TO247
FCH47N60F085 substitution
FCH47N60F085 Datasheet (PDF)
fch47n60f f085.pdf
October 2013FCH47N60F_F085N-Channel MOSFET600V, 47A, 75m DFeatures Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren
fch47n60f.pdf
FebruaryTMSuperFETFCH47N60F _F133600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult
fch47n60f.pdf
MOSFET N-Channel,SUPERFET), FRFET)600 V, 47 A, 73 mWFCH47N60FDescriptionSUPERFET MOSFET is ON Semiconductors first generation ofwww.onsemi.comhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored toVDS RDS(ON) MAX ID MAXminimize conduct
Datasheet: FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 , FDPC8016S , FCPF400N80Z , MMD60R360PRH , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F .
Keywords - FCH47N60F085 MOSFET datasheet
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