HUF75639P3 Datasheet and Replacement
Type Designator: HUF75639P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO220AB
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HUF75639P3 Datasheet (PDF)
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HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T
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MOSFET Power, N-Channel,Ultrafet100 V, 56 A, 25 mWHUF75639G3, HUF75639P3,HUF75639S3S, HUF75639S3www.onsemi.comThese N-Channel power MOSFETs are manufactured using theinnovative Ultrafet process. This advanced process technologyachieves the lowest possible on- resistance per silicon area, resultingin outstanding performance. This device is capable of withstandinghigh ener
huf75639s3st.pdf
HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T
huf75639s f085a.pdf
HUFA75639S3ST_F085AData Sheet March 201256A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Peak Current vs Pulse Width Curveare manufactured using the UIS Rating Curveinnovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar
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