FDZ1416NZ Specs and Replacement
Type Designator: FDZ1416NZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 136 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: WLCSP
FDZ1416NZ substitution
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FDZ1416NZ datasheet
fdz1416nz.pdf
July 2014 FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET 24 V, 7 A, 23 m Features General Description This device is designed specifically as a single package solution Max rS1S2(on) = 23 m at VGS = 4.5 V, IS1S2 = 1 A for Li-Ion battery pack protection circuit and other ultra-portable Max rS1S2(on) = 25 m at VGS = 4 V, IS1S2 = 1 A applications. It features ... See More ⇒
fdz1416nz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , AO4468 , FDMS8350L , FDD9407F085 , FDMC86259P , FDMS5360LF085 , FDMS5362LF085 , FDMD84100 , FCH041N60E , FDMC6686P .
Keywords - FDZ1416NZ MOSFET specs
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