All MOSFET. FDZ1416NZ Datasheet

 

FDZ1416NZ Datasheet and Replacement


   Type Designator: FDZ1416NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: WLCSP
 

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FDZ1416NZ Datasheet (PDF)

 ..1. Size:341K  fairchild semi
 fdz1416nz.pdf pdf_icon

FDZ1416NZ

July 2014FDZ1416NZCommon Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET24 V, 7 A, 23 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rS1S2(on) = 23 m at VGS = 4.5 V, IS1S2 = 1 Afor Li-Ion battery pack protection circuit and other ultra-portable Max rS1S2(on) = 25 m at VGS = 4 V, IS1S2 = 1 Aapplications. It features

 ..2. Size:303K  onsemi
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FDZ1416NZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , IRFP064N , FDMS8350L , FDD9407F085 , FDMC86259P , FDMS5360LF085 , FDMS5362LF085 , FDMD84100 , FCH041N60E , FDMC6686P .

History: BRS1N60 | SMG2305PE | IRF7530 | IRHN7054 | RUH1H150R | SSF2N60D1 | IXFP72N20X3M

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