All MOSFET. FDD9407F085 Datasheet

 

FDD9407F085 Datasheet and Replacement


   Type Designator: FDD9407F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 1580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO252
 

 FDD9407F085 substitution

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FDD9407F085 Datasheet (PDF)

 7.1. Size:371K  fairchild semi
fdd9407 f085.pdf pdf_icon

FDD9407F085

August 2013FDD9407_F085N-Channel Power Trench MOSFET40V, 100A, 2.0m DFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80A D Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Ste

 7.2. Size:440K  onsemi
fdd9407l-f085.pdf pdf_icon

FDD9407F085

FDD9407L-F085N-Channel Logic Level PowerTrench MOSFET 40 V, 100 A, 1.7 mDFeatures Typical RDS(on) = 1.4 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 96 nC at VGS = 10V, ID = 80 ADG UIS CapabilityG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252SApplications (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Int

 7.3. Size:609K  onsemi
fdd9407-f085.pdf pdf_icon

FDD9407F085

FDD9407-F085N-Channel Power Trench MOSFET40V, 100A, 2.0mDFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80AD Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integra

 7.4. Size:208K  inchange semiconductor
fdd9407.pdf pdf_icon

FDD9407F085

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDD9407FEATURESWith TO-252(DPAK) packagingUIS capabilityHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

Datasheet: FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , FDZ1416NZ , FDMS8350L , IRFZ44N , FDMC86259P , FDMS5360LF085 , FDMS5362LF085 , FDMD84100 , FCH041N60E , FDMC6686P , FDMS86150A , FDMS8670S .

History: R6007JND3

Keywords - FDD9407F085 MOSFET datasheet

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