FCH170N60 Specs and Replacement
Type Designator: FCH170N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: TO247
FCH170N60 substitution
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FCH170N60 datasheet
fch170n60.pdf
July 2014 FCH170N60 N-Channel SuperFET II MOSFET 600 V, 22 A, 170 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 150 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 42 nC) and lower... See More ⇒
Detailed specifications: FDMS86163P , FDBL9401F085 , FDD9409F085 , FDMA86265P , FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , 8205A , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU .
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