All MOSFET. FCH170N60 Datasheet

 

FCH170N60 Datasheet and Replacement


   Type Designator: FCH170N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO247
 
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FCH170N60 Datasheet (PDF)

 ..1. Size:618K  fairchild semi
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FCH170N60

July 2014FCH170N60N-Channel SuperFET II MOSFET600 V, 22 A, 170 mFeatures Description 650 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 150 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 42 nC) and lower

 ..2. Size:361K  inchange semiconductor
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FCH170N60

isc N-Channel MOSFET Transistor FCH170N60FEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 170m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: FDMS86163P , FDBL9401F085 , FDD9409F085 , FDMA86265P , FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , 2SK3878 , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU .

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