All MOSFET. FDB86363F085 Datasheet

 

FDB86363F085 Datasheet and Replacement


   Type Designator: FDB86363F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 131 nC
   tr ⓘ - Rise Time: 129 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO263 D2PAK
 

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FDB86363F085 Datasheet (PDF)

 6.1. Size:486K  fairchild semi
 fdb86363 f085.pdf pdf_icon

FDB86363F085

June 2014FDB86363_F085N-Channel PowerTrench MOSFETDD80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability GS RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Co

 6.2. Size:265K  onsemi
 fdb86363-f085.pdf pdf_icon

FDB86363F085

MOSFET - POWERTRENCH),N-Channel80 V, 110 A, 2.4 mWFDB86363-F085Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 Awww.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS CapabilityN-Channel AEC-Q101 Qualified and PPAP Capable(Pin 2) This Device is Pb-Free, Halide Free and is RoHS CompliantDApplications Automotive Engine Control

 7.1. Size:465K  fairchild semi
 fdb86366 f085.pdf pdf_icon

FDB86363F085

December 2014FDB86366_F085N-Channel PowerTrench MOSFET80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers In

 7.2. Size:365K  fairchild semi
 fdb86360 f085.pdf pdf_icon

FDB86363F085

January 2014FDB86360_F085N-Channel Power Trench MOSFETDD80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteatwww.fairchildsemi.c

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Datasheet: FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , K3569 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , FCPF850N80Z .

History: SML30J130F | FDB9506L-F085

Keywords - FDB86363F085 MOSFET datasheet

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