FDB86363F085 - аналоги и даташиты транзистора

 

FDB86363F085 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FDB86363F085
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 129 ns
   Cossⓘ - Выходная емкость: 1400 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO263 D2PAK

 Аналог (замена) для FDB86363F085

 

FDB86363F085 Datasheet (PDF)

 6.1. Size:486K  fairchild semi
fdb86363 f085.pdfpdf_icon

FDB86363F085

June 2014 FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co

 6.2. Size:265K  onsemi
fdb86363-f085.pdfpdf_icon

FDB86363F085

MOSFET - POWERTRENCH), N-Channel 80 V, 110 A, 2.4 mW FDB86363-F085 Features Typical RDS(on) = 2.0 mW at VGS = 10 V, ID = 80 A www.onsemi.com Typical Qg(tot) = 131 nC at VGS = 10 V, ID = 80 A UIS Capability N-Channel AEC-Q101 Qualified and PPAP Capable (Pin 2) This Device is Pb-Free, Halide Free and is RoHS Compliant D Applications Automotive Engine Control

 7.1. Size:465K  fairchild semi
fdb86366 f085.pdfpdf_icon

FDB86363F085

December 2014 FDB86366_F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In

 7.2. Size:365K  fairchild semi
fdb86360 f085.pdfpdf_icon

FDB86363F085

January 2014 FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c

Другие MOSFET... FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , IRF9540 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , FCPF850N80Z .

 

 
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