All MOSFET. FCPF1300N80Z Datasheet

 

FCPF1300N80Z Datasheet and Replacement


   Type Designator: FCPF1300N80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.3 nS
   Cossⓘ - Output Capacitance: 22.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220F
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FCPF1300N80Z Datasheet (PDF)

 ..1. Size:991K  fairchild semi
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FCPF1300N80Z

July 2014FCPF1300N80ZN-Channel SuperFET II MOSFET800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.57

 ..2. Size:758K  onsemi
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FCPF1300N80Z

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:276K  inchange semiconductor
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FCPF1300N80Z

isc N-Channel MOSFET Transistor FCPF1300N80ZFEATURES Drain-source on-resistance:RDS(on) 1.3@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC - DC Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV

 8.1. Size:898K  fairchild semi
fcp13n60n fcpf13n60nt.pdf pdf_icon

FCPF1300N80Z

August 2009SupreMOSTMFCP13N60N / FCPF13N60NTN-Channel MOSFET 600V, 13A, 0.258Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC)process that differentiates it from preceding multi-epi based

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STP85NF55L | AP80T12GP-HF | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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