FCPF1300N80Z - описание и поиск аналогов

 

FCPF1300N80Z. Аналоги и основные параметры

Наименование производителя: FCPF1300N80Z

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 24 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.3 ns

Cossⓘ - Выходная емкость: 22.3 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm

Тип корпуса: TO220F

Аналог (замена) для FCPF1300N80Z

- подборⓘ MOSFET транзистора по параметрам

 

FCPF1300N80Z даташит

 ..1. Size:991K  fairchild semi
fcpf1300n80z.pdfpdf_icon

FCPF1300N80Z

July 2014 FCPF1300N80Z N-Channel SuperFET II MOSFET 800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.57

 ..2. Size:758K  onsemi
fcpf1300n80z.pdfpdf_icon

FCPF1300N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:276K  inchange semiconductor
fcpf1300n80z.pdfpdf_icon

FCPF1300N80Z

isc N-Channel MOSFET Transistor FCPF1300N80Z FEATURES Drain-source on-resistance RDS(on) 1.3 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC - DC Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800 V DSS V

 8.1. Size:898K  fairchild semi
fcp13n60n fcpf13n60nt.pdfpdf_icon

FCPF1300N80Z

August 2009 SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC) process that differentiates it from preceding multi-epi based

Другие MOSFET... FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , FCPF850N80Z , FCP150N65F , IRFP260 , FDA16N50LDTU , FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , FCH150N65FF155 , FCPF650N80Z , FCPF260N65FL1 .

 

 

 

 

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