SPI70N10L Specs and Replacement
Type Designator: SPI70N10L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 640 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: PTO262
SPI70N10L substitution
- MOSFET ⓘ Cross-Reference Search
SPI70N10L datasheet
spi70n10l spp70n10l spb70n10l.pdf
SPI70N10L SPP70N10L,SPB70N10L SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175 C operating temperature Avalanche rated 2 dv/dt rated 3 2 1 P-TO220-3-1 Type Package Ordering Code Marking SPP70N10L P-TO220-3-1 Q67040-S4175 70N10L SPB70N10L... See More ⇒
Detailed specifications: 2SJ648 , 2SK1937-01 , 2SK537 , SPP100N08S2-07 , SPB100N08S2-07 , SST270 , SST271 , SPD35N10 , P60NF06 , SPP70N10L , SPB70N10L , SI2309DS , MT3205 , BUZ78 , NVD2955 , J203 , J204 .
Keywords - SPI70N10L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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