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NVD2955 Specs and Replacement

Type Designator: NVD2955

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: IPAK

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NVD2955 datasheet

 ..1. Size:98K  onsemi
 ntd2955 nvd2955.pdf pdf_icon

NVD2955

NTD2955, NVD2955 Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power http //onsemi.com motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating sa... See More ⇒

Detailed specifications: SST271 , SPD35N10 , SPI70N10L , SPP70N10L , SPB70N10L , SI2309DS , MT3205 , BUZ78 , 7N60 , J203 , J204 , SST201 , SST202 , SST203 , SST204 , JCS12N60CT , JCS12N60FT .

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