All MOSFET. NVD2955 Datasheet

 

NVD2955 Datasheet and Replacement


   Type Designator: NVD2955
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: IPAK
 

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NVD2955 Datasheet (PDF)

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NVD2955

NTD2955, NVD2955Power MOSFET-60 V, -12 A, P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low-voltage, high-speed switching applications in power supplies, converters, and powerhttp://onsemi.commotor controls. These devices are particularly well suited for bridgecircuits where diode speed and commutating sa

Datasheet: SST271 , SPD35N10 , SPI70N10L , SPP70N10L , SPB70N10L , SI2309DS , MT3205 , BUZ78 , MMIS60R580P , J203 , J204 , SST201 , SST202 , SST203 , SST204 , JCS12N60CT , JCS12N60FT .

History: SIHG47N60E | IRF131

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