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JCS12N60CT Spec and Replacement


   Type Designator: JCS12N60CT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 133 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220C

 JCS12N60CT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS12N60CT Specs

 ..1. Size:1207K  jilin sino
 jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf pdf_icon

JCS12N60CT

N R N-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒

 6.1. Size:1072K  jilin sino
 jcs12n60t.pdf pdf_icon

JCS12N60CT

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 7.1. Size:1140K  1
 jcs12n65t.pdf pdf_icon

JCS12N60CT

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson @Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA... See More ⇒

 7.2. Size:1489K  jilin sino
 jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf pdf_icon

JCS12N60CT

N R N-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒

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Detailed specifications: BUZ78 , NVD2955 , J203 , J204 , SST201 , SST202 , SST203 , SST204 , AON7403 , JCS12N60FT , SI2301DS , ULB4132 , IRLB4132PBF , 2SK240 , 2SJ75 , 2SK146 , 2SJ73 .

History: JCS4N60S

Keywords - JCS12N60CT MOSFET specs

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