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JCS12N60CT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: JCS12N60CT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 133 ns
   Cossⓘ - Выходная емкость: 175 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO220C

 Аналог (замена) для JCS12N60CT

 

 

JCS12N60CT Datasheet (PDF)

 ..1. Size:1207K  jilin sino
 jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf

JCS12N60CT JCS12N60CT

N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 6.1. Size:1072K  jilin sino
 jcs12n60t.pdf

JCS12N60CT JCS12N60CT

N-CHANNEL MOSFETRJCS12N60T Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65&! @Vgs=10V39nC Qg APPLICATIONS High efficiency switchmode power supplies El

 7.1. Size:1140K  1
 jcs12n65t.pdf

JCS12N60CT JCS12N60CT

N RN-CHANNEL MOSFETJCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson@Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 7.2. Size:1489K  jilin sino
 jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf

JCS12N60CT JCS12N60CT

N RN-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 7.3. Size:1410K  jilin sino
 jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf

JCS12N60CT JCS12N60CT

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 7.4. Size:543K  jilin sino
 jcs12n65f.pdf

JCS12N60CT JCS12N60CT

N N- CHANNEL MOSFET RJCS12N65FC MAIN CHARACTERISTICS Package ID 12 A VDSS 650 V Rdson@Vgs=10V 0.52 Qg 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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