LND150N3 Datasheet and Replacement
Type Designator: LND150N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 450 nS
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO92
LND150N3 substitution
LND150N3 Datasheet (PDF)
lnd150.pdf
LND150N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1
Datasheet: 2SK147 , IFN146 , 2SK2564 , 2SK1537 , 2SK2879-01 , 2SK2367 , 2SK2368 , LND150K1 , IRF640 , LND150N8 , LND250 , FS5UM-5 , FS5VS-5 , FS5KM-5 , FS7UM-5 , FS7VS-5 , FS7KM-5 .
History: PTA20N50A | NCE0110AK | HM6804D | KMB054N40DC
Keywords - LND150N3 MOSFET datasheet
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History: PTA20N50A | NCE0110AK | HM6804D | KMB054N40DC
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