All MOSFET. LND150N3 Datasheet

 

LND150N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LND150N3
   Marking Code: D150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO92

 LND150N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LND150N3 Datasheet (PDF)

 8.1. Size:621K  supertex
 lnd150.pdf

LND150N3 LND150N3

LND150N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND1

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFN340N06

 

 
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