HUF76113T3ST Datasheet PDF and Equivalents Search

 ..1. Size:184K  intersil
 huf76113t3st.pdf

HUF76113T3ST TM Data Sheet June 2000 File Number 4388.3 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 4.7A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.031 UltraFET process. This advanced process technology achieves the Temperature Compensating PS... See More ⇒

 6.1. Size:326K  fairchild semi
 huf76113sk8.pdf

HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.030 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowe... See More ⇒

 6.2. Size:219K  intersil
 huf76113dk8.pdf

HUF76113DK8 TM Data Sheet June 2000 File Number 4387.5 6A, 30V, 0.032 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032 UltraFET process. This advanced process technology achieves the Temperature Compensating PS... See More ⇒

 8.1. Size:223K  fairchild semi
 huf76132p3-s3s.pdf

HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model achie... See More ⇒

 8.2. Size:263K  fairchild semi
 huf76132sk8.pdf

HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 11.5A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models l... See More ⇒

 8.3. Size:300K  fairchild semi
 huf76145s3.pdf

HUF76145P3, HUF76145S3, HUF76145S3S Data Sheet December 2003 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process t... See More ⇒

 8.4. Size:160K  fairchild semi
 huf76121d3.pdf

HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model ac... See More ⇒

 8.5. Size:256K  fairchild semi
 huf76131sk8.pdf

HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 10A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowes... See More ⇒

 8.6. Size:225K  fairchild semi
 huf76145p3-s3s.pdf

HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process technology ... See More ⇒

 8.7. Size:118K  intersil
 huf76129p3-s3s.pdf

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 56A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

 8.8. Size:121K  intersil
 huf76139.pdf

HUF76139P3, HUF76139S3S Data Sheet September 1999 File Number 4399.5 75A, 30V, 0.0075 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075 innovative UltraFET process. This advanced process technology Temperature Compensating ... See More ⇒

 8.9. Size:367K  intersil
 huf76107p3.pdf

HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power 20A, 30V MOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052 the innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model a... See More ⇒

 8.10. Size:134K  intersil
 huf76121sk8.pdf

HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 8A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models ... See More ⇒

 8.11. Size:118K  intersil
 huf76137p3.pdf

HUF76137P3, HUF76137S3S Data Sheet September 1999 File Number 4398.6 75A, 30V, 0.009 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.009 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

 8.12. Size:109K  intersil
 huf76143.pdf

HUF76143P3, HUF76143S3S Data Sheet September 1999 File Number 4400.7 75A, 30V, 0.0055 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0055 innovative UltraFET process. This advanced process technology Temperature Compensating ... See More ⇒

 8.13. Size:134K  intersil
 huf76105sk8.pdf

HUF76105SK8 Data Sheet May 1999 File Number 4719.1 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Simulation Models lowest possible... See More ⇒

 8.14. Size:112K  intersil
 huf76107d3-s.pdf

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 8.15. Size:116K  intersil
 huf76129d3-s.pdf

HUF76129D3, HUF76129D3S Data Sheet September 1999 File Number 4394.5 20A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

 8.16. Size:114K  intersil
 huf76121p3-s3s.pdf

HUF76121P3, HUF76121S3S Data Sheet September 1999 File Number 4392.8 47A, 30V, 0.021 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 47A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021 innovative UltraFET process. This advanced process technology Temperature Compensating PS... See More ⇒

 8.17. Size:174K  intersil
 huf76105dk8.pdf

HUF76105DK8 TM Data Sheet June 2000 File Number 4380.6 5A, 30V, 0.050 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Temperature Compensating... See More ⇒