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HUF76113T3ST Specs and Replacement


   Type Designator: HUF76113T3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SOT223
 

 HUF76113T3ST substitution

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HUF76113T3ST Specs

 ..1. Size:184K  intersil
huf76113t3st.pdf pdf_icon

HUF76113T3ST

HUF76113T3ST TM Data Sheet June 2000 File Number 4388.3 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 4.7A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.031 UltraFET process. This advanced process technology achieves the Temperature Compensating PS... See More ⇒

 6.1. Size:326K  fairchild semi
huf76113sk8.pdf pdf_icon

HUF76113T3ST

HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.030 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowe... See More ⇒

 6.2. Size:219K  intersil
huf76113dk8.pdf pdf_icon

HUF76113T3ST

HUF76113DK8 TM Data Sheet June 2000 File Number 4387.5 6A, 30V, 0.032 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032 UltraFET process. This advanced process technology achieves the Temperature Compensating PS... See More ⇒

 8.1. Size:223K  fairchild semi
huf76132p3-s3s.pdf pdf_icon

HUF76113T3ST

HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model achie... See More ⇒

Detailed specifications: HUF75652G3 , HUF76105DK8 , HUF76105SK8 , HUF76107D3 , HUF76107D3S , HUF76107P3 , HUF76113DK8 , HUF76113SK8 , IRF3205 , HUF76121D3 , HUF76121D3S , HUF76121P3 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , HUF76129D3S , HUF76129P3 .

History: 2SK2225-80-E

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