HUF76113T3ST - описание и поиск аналогов

HUF76113T3ST TM Data Sheet June 2000 File Number 4388.3 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 4.7A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.031 UltraFET process. This advanced process technology achieves the Temperature Compensating PS

HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.030 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowe

HUF76113DK8 TM Data Sheet June 2000 File Number 4387.5 6A, 30V, 0.032 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 6A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.032 UltraFET process. This advanced process technology achieves the Temperature Compensating PS

HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model achie

HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 11.5A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models l

HUF76145P3, HUF76145S3, HUF76145S3S Data Sheet December 2003 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process t

HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023 innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model ac

HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 10A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013 UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Model lowes

HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045 innovative UltraFET process. Temperature Compensating PSPICE Model This advanced process technology

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 56A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS

HUF76139P3, HUF76139S3S Data Sheet September 1999 File Number 4399.5 75A, 30V, 0.0075 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075 innovative UltraFET process. This advanced process technology Temperature Compensating

HUF76107P3 Data Sheet October 1999 File Number 4382.5 20A, 30V, 0.052 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power 20A, 30V MOSFETs are manufactured using Ultra Low On-Resistance, rDS(ON) = 0.052 the innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model a

HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 8A, 30V manufactured using the innovative Simulation Models UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Models

HUF76137P3, HUF76137S3S Data Sheet September 1999 File Number 4398.6 75A, 30V, 0.009 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.009 innovative UltraFET process. This advanced process technology Temperature Compensating PS

HUF76143P3, HUF76143S3S Data Sheet September 1999 File Number 4400.7 75A, 30V, 0.0055 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0055 innovative UltraFET process. This advanced process technology Temperature Compensating

HUF76105SK8 Data Sheet May 1999 File Number 4719.1 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5.5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Simulation Models lowest possible

HUF76129D3, HUF76129D3S Data Sheet September 1999 File Number 4394.5 20A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 20A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016 innovative UltraFET process. This advanced process technology Temperature Compensating PS

HUF76121P3, HUF76121S3S Data Sheet September 1999 File Number 4392.8 47A, 30V, 0.021 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 47A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021 innovative UltraFET process. This advanced process technology Temperature Compensating PS

HUF76105DK8 TM Data Sheet June 2000 File Number 4380.6 5A, 30V, 0.050 Ohm, Dual N-Channel, Features Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is 5A, 30V manufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.050 UltraFET process. This advanced process technology achieves the Temperature Compensating