2SK2171 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2171
Marking Code: KM_KM3_KM4_KM5
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
Package: PCP
2SK2171 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2171 Datasheet (PDF)
2sk2171.pdf
Ordering number:ENN4871N-Channel Junction Silicon FET2SK2171High-Frequency, Low-Frequency AmplifierAnalog Switch ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Large | yfs |.2125 Small Ciss.[2SK2171] High PD allowable power dissipation.4.51.51.60.4 0.53 2 10.41.53.0 1 : Source2 : Gate0.753 : DrainSANYO : PCP
2sk2173.pdf
2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2173 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 13 m (typ.) DS (ON) High forward transfer admittance : |Y | = 40 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancemen
2sk2170.pdf
Ordering number:ENN4858N-Channel Junction Silicon FET2SK2170Impedance Converter ApplicationsApplications Package Dimensions Low-frequency amplifier, analog switch, constantunit:mmcurrent source.2124[2SK2170]Features0.75 Ultrasmall-sized package permitting 2SK2170-0.3 0.6applied sets to be made small and slim.30 to 0.11 20.20.10.5 0.51.61 : Sourc
2sk2157.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2157N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2157 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V. This product has a low ON resistance and 1.5 0.12.0 0.2superb switching characteristics and is ideal fo
2sk2141.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2141SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2141 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-state ResistanceRDS(on) = 1.1 MAX. (VGS = 10 V, ID = 3
2sk2140 2sk2140-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2140, 2SK2140-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 1.5 MAX.
2sk2112.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2112N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2112 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of4.5 0.1an IC operating at 5 V.1.6 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is idea
2sk2110.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2110N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2110 is a N-channel MOSFET of a vertical type 4.5 0.1and is a switching element that can be directly driven by the output of an IC operating at 5 V. 1.6 0.2 1.5 0.1 This product has a low on-state resistance and superb switching charact
2sk2137.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2137SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2137 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-Resistance2SK2137: RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis
2sk2138 2sk2138-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2138, 2SK2138-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 2.4 MAX.
2sk210.pdf
2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications Unit: mm VHF Band Amplifier Applications High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating
2sk2145.pdf
2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications Unit: mm Including two devices in SM5 (super mini type with 5 leads.) High |Y |: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 k
2sk2199.pdf
Ordering number:ENN4557N-Channel Silicon MOSFET2SK2199Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK2199]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2199]6.5 2.35.0 0.540.5
2sk2160.pdf
Ordering number:ENN4600AN-Channel Silicon MOSFET2SK2160Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2160] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO
2sk2151.pdf
Ordering number:ENN4568AN-Channel Silicon MOSFET2SK2151Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2151]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta
2sk212.pdf
Ordering number:EN661EN-Channel Junction Silicon FET2SK212FM Tuner ApplicationsFeatures Package Dimensions Ideal for FM tuners in low-voltage radios, car radios,unit:mmetc.2040A Small-sized package permitting 2SK212-applied sets[2SK212]to be made small and slim.2.24.0 Small Crss (Crss=0.04pF typ). High yfs ( yfs =6.0mS typ).0.40.50.4
2sk2167.pdf
Ordering number:ENN4631N-Channel Silicon MOSFET2SK2167Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2167]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta =
2sk2154.pdf
Ordering number:ENN4689N-Channel Silicon MOSFET2SK2154Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK2154]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2154]6.5 2.35.0 0.540.5
2sk2152.pdf
Ordering number:ENN4569AN-Channel Silicon MOSFET2SK2152Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2152]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta
2sk2169.pdf
Ordering number:ENN4556N-Channel Silicon MOSFET2SK2169Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SK2169]2.51.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CP
2sk2108.pdf
Ordering number:ENN4602AN-Channel Silicon MOSFET2SK2108Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2108] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO
2sk2161.pdf
Ordering number:ENN4601AN-Channel Silicon MOSFET2SK2161Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2161] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO
2sk2157c.pdf
Preliminary Data Sheet 2SK2157C R07DS1264EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 18, 2015Description The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2109.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2109N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2109 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of4.5 0.1an IC operating at 5 V.1.5 0.11.6 0.2This product has a low ON resistance and superb switchingcharacteristics and is ide
2sk2159.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2159N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2159 is an N-channel vertical type MOS FET featur-PACKAGE DIMENSIONSing an operating voltage as low as 1.5 V. Because it can be(in millimeters)driven on a low voltage and it is not necessary to consider4.5 0.1driving current, the 2SK2159 is suitable for driving actuators of1.6
2sk2139.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2139SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2139 is N-Channel Power MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.10.00.3 4.50.23.20.22.70.2FEATURES Low On-ResistanceRDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis
2sk2158.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2158N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2158 is an N-channel vertical type MOS FET featur-PACKAGE DIMENSIONSing an operating voltage as low as 1.5 V. Because it can be(in millimeters)driven on a low voltage and it is not necessary to consider2.8 0.2driving current, the 2SK2158 is suitable for use in low-voltage1.5 0.
2sk2103.pdf
TransistorsSmall switching (30V, 2A)2SK2103FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications98Transistors 2SK
2sk2128.pdf
Power F-MOS FETs 2SK21282SK2128Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS >15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=20V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
2sk2123.pdf
Power F-MOS FETs 2SK21232SK2123Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 100mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2126.pdf
Power F-MOS FETs 2SK21262SK2126Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 100mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 40nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2127.pdf
Power F-MOS FETs 2SK21272SK2127Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 130mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 60nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2122.pdf
Power F-MOS FETs 2SK21222SK2122Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 3.2mJ4.6 0.29.9 0.3 2.9 0.2High-speed switching : tf= 50ns3.2 0.1No secondary breakdown Applications2.6 0.1Non-contact relay1.2 0.151.45 0.15 0.7 0.1Solenoid drive0.75 0.1Motor drive2.54 0.2Control equipment5
2sk2129.pdf
Power F-MOS FETs 2SK21292SK2129Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 20mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 50nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
2sk2124.pdf
Power F-MOS FETs 2SK21242SK2124Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 130mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 60nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv
2sk2130.pdf
Power F-MOS FETs 2SK21302SK2130Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 45nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive
2sk2125.pdf
Power F-MOS FETs 2SK21252SK2125Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15.6mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor dri
2sk2148-01.pdf
N-channel MOS-FET2SK2148-01FAP-IIA Series 600V 0,75 12A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi
2sk2101 01mr.pdf
N-channel MOS-FET2SK2101-01MRFAP-IIA Series 800V 2,1 6A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
2sk2144.pdf
2SK2144Silicon N-Channel MOS FETADE-208-1349 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converterOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2144Absolute Maximum Ratings (Ta = 25
2sk2114 2sk2115.pdf
2SK2114, 2SK2115Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2114, 2SK2115Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so
2sk2118.pdf
2SK2118Silicon N-Channel MOS FETADE-208-1348 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor ControlOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2118Absolute Maximum Rat
2sk213 2sk214 2sk215 2sk216.pdf
2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D
2sk2116 2sk2117.pdf
2SK2116, 2SK2117Silicon N-Channel MOS FETADE-208-1347 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2116, 2SK2117Ordering InformationType No. VD
2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf
2sk2190 fp10w50vx2.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2190Case : E-packCase : ITO-3P(Unit : mm)(FP10W50VX2)500V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vo
2sk2197 fp20w50vx2.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2197Case : E-packCase : ITO-3P(Unit : mm)(FP20W50VX2)500V 20AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vo
2sk2193.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2193Case : E-packCase : ITO-3P(Unit : mm)(FP12W50VX2)500V 12AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vo
2sk2182.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2182Case : E-packCase : FTO-220(Unit : mm)(F3F50VX2)500V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High
2sk2192 f12w50vx2.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2192Case : E-packCase : MTO-3P(Unit : mm)(F12W50VX2)500V 12AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vol
2sk2191.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2191Case : E-packCase : STO-220(Unit : mm)(F12S50VX2)500V 12AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vo
2sk2180.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2180Case : E-packCase : TO-220(Unit : mm)(F3V50VX2)500V3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High v
2sk2186.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2186Case : E-packCase : TO-220(Unit : mm)(F10V50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hig
2sk2188 f10f50vx2.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2188Case : E-packCase : FTO-220(Unit : mm)(F10F50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hi
2sk2196.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2196Case : MTO-3P(Unit : mm)(F20W50VX2)500V 20AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh voltage power supplyInverterR
2sk2189.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2189Case : E-packCase : MTO-3P(Unit : mm)(F10W50VX2)500V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vol
2sk2185.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2185Case : E-packCase : FTO-220(Unit : mm)(F5F50VX2)500V5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High
2sk2195.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONSCase : ITO-3P2SK2195(FP15W50VX2)500V 15AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh voltage power supplyInverter (Unit : mm)R
2sk2194 f15w50vx2.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2194Case : E-packCase : MTO-3P(Unit : mm)(F15W50VX2)500V 15AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vol
2sk2109.pdf
SMD Type MOSFETN-Channel MOSFET2SK21091.70 0.1 Features VDS (V) = 60V ID = 0.5A RDS(ON) 1 (VGS = 4V)0.42 0.10.46 0.1Drain (D) RDS(ON) 0.8 (VGS = 10V)Gate (G)Internal diode1.GateGate protection2.Draindiode3.SourceSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V
2sk2159.pdf
SMD Type MOSFETN-Channel MOSFET2SK21591.70 0.1 Features VDS (V) = 60V ID = 2 AD0.42 0.10.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V)Internal diode1.GateG2.DrainGate protection diode3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage
2sk2112.pdf
SMD Type MOSFETN-Channel MOSFET2SK21121.70 0.1 Features VDS (V) = 100V ID = 1 A0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS = 10V)Drain (D) RDS(ON) 1.2 (VGS = 4V)1.Gate2.DrainGate (G)Internal diode3.SourceGate protectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100
2sk2110.pdf
SMD Type MOSFETN-Channel MOSFET2SK21101.70 0.1 Features VDS (V) = 100V ID = 0.5 ADrain (D)0.42 0.10.46 0.1 RDS(ON) 1.2 (VGS = 10V) RDS(ON) 1.5 (VGS = 4V)Gate (G)1.GateInternal diode2.DrainGate3.SourceprotectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 10
2sk2111.pdf
SMD Type MOSFETN-Channel MOSFET2SK21111.70 0.1 Features VDS (V) = 60V ID = 1 ADrain (D) RDS(ON) 0.45 (VGS = 10V) 0.42 0.10.46 0.1 RDS(ON) 0.6 (VGS = 4V)Gate (G)Internal diode1.GateGate protection2.Draindiode3.SourceSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V
2sk2159.pdf
2SK2159www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no
2sk2158-t1b.pdf
2SK2158-T1Bwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
2sk2116.pdf
isc N-Channel MOSFET Transistor 2SK2116DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VD
2sk2188.pdf
isc N-Channel MOSFET Transistor 2SK2188DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2144.pdf
isc N-Channel MOSFET Transistor 2SK2144DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk2147-01.pdf
isc N-Channel MOSFET Transistor 2SK2147-01DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM
2sk2149.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2149 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500
2sk2118.pdf
isc N-Channel MOSFET Transistor 2SK2118DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk2182.pdf
isc N-Channel MOSFET Transistor 2SK2182DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2108.pdf
isc N-Channel MOSFET Transistor 2SK2108DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VD
2sk2146.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2146 DESCRIPTION Drain Current ID= 2A@ TC=25 Drain Source Voltage- : VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 250 V
2sk2148-01.pdf
isc N-Channel MOSFET Transistor 2SK2148-01DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM
2sk2180.pdf
isc N-Channel MOSFET Transistor 2SK2180DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power amplifierHigh voltage power supplyInverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE U
2sk2114.pdf
isc N-Channel MOSFET Transistor 2SK2114DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VD
2sk2150.pdf
isc N-Channel MOSFET Transistor 2SK2150DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
2sk2183.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2183 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag
2sk2186.pdf
isc N-Channel MOSFET Transistor 2SK2186DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2185.pdf
isc N-Channel MOSFET Transistor 2SK2185DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2117.pdf
isc N-Channel MOSFET Transistor 2SK2117DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VD
2sk2115.pdf
isc N-Channel MOSFET Transistor 2SK2115DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSHigh speed power switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for Switching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta
2sk2180-01.pdf
isc N-Channel MOSFET Transistor 2SK2180-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
