2N7013 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N7013
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 1 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 40 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 1.2 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 4.8 nC
   Rise Time (tr): 13 nS
   Drain-Source Capacitance (Cd): 120 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
   Package: TO250

2N7013 Transistor Equivalent Substitute - MOSFET Cross-Reference Search