BR12N60 PDF and Equivalents Search

 

BR12N60 Specs and Replacement

Type Designator: BR12N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220

BR12N60 substitution

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BR12N60 datasheet

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BR12N60

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Detailed specifications: 2SK3508-01MR, 2SK4200LS, 2SK3354, 2SK3354S, 2SK3354Z, 2SK2675, 2SK596, BR100N03, IRFP250N, BR1N60, BR2N60, BR4145, BR4953, BR4N60, BR50N06, BR50N10, BR70N06

Keywords - BR12N60 MOSFET specs

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