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BR1N60 Specs and Replacement

Type Designator: BR1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO220

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BR1N60 datasheet

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 br1n60.pdf pdf_icon

BR1N60

BR1N60(BRCS1N60R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ... See More ⇒

Detailed specifications: 2SK4200LS, 2SK3354, 2SK3354S, 2SK3354Z, 2SK2675, 2SK596, BR100N03, BR12N60, IRF630, BR2N60, BR4145, BR4953, BR4N60, BR50N06, BR50N10, BR70N06, BR75N08

Keywords - BR1N60 MOSFET specs

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