All MOSFET. BR4953 Datasheet

 

BR4953 Datasheet and Replacement


   Type Designator: BR4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: SOP8
 

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BR4953 Datasheet (PDF)

 ..1. Size:743K  blue-rocket-elect
 br4953.pdf pdf_icon

BR4953

BR4953(BRCS4953SC) Rev.C Feb.-2015 DATA SHEET / Descriptions SOP-8 P MOS Dual P-Channel MOSFET in a SOP-8 Plastic Package. / Features Super high dense cell design for low RDS(ON),Rugged and reliable. / Applications

 0.1. Size:921K  blue-rocket-elect
 br4953d.pdf pdf_icon

BR4953

BR4953D Rev.H Oct.-2018 DATA SHEET / Descriptions SOP-8 P MOS Dual P-Channel MOSFET in a SOP-8 Plastic Package. / Features Super high dense cell design for low RDS(ON),Rugged and reliable. / Applications

 9.1. Size:66K  motorola
 mmbr4957.pdf pdf_icon

BR4953

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR4957LT1/DThe RF LinePNP SiliconMMBR4957LT1, T3High-Frequency Transistor. . . designed for highgain, lownoise amplifier oscillator and mixer applica-tions. Specifically packaged for thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 17 dB Typ @ f = 450 MHzIC = 30 mA

Datasheet: 2SK3354Z , 2SK2675 , 2SK596 , BR100N03 , BR12N60 , BR1N60 , BR2N60 , BR4145 , IRFP260 , BR4N60 , BR50N06 , BR50N10 , BR70N06 , BR75N08 , BR75N75 , BR7N60 , BR7N80 .

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