BR4953 Specs and Replacement
Type Designator: BR4953
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOP8
BR4953 substitution
- MOSFET ⓘ Cross-Reference Search
BR4953 datasheet
br4953d.pdf
BR4953D Rev.H Oct.-2018 DATA SHEET / Descriptions SOP-8 P MOS Dual P-Channel MOSFET in a SOP-8 Plastic Package. / Features Super high dense cell design for low RDS(ON),Rugged and reliable. / Applications ... See More ⇒
Detailed specifications: 2SK3354Z, 2SK2675, 2SK596, BR100N03, BR12N60, BR1N60, BR2N60, BR4145, 2SK3878, BR4N60, BR50N06, BR50N10, BR70N06, BR75N08, BR75N75, BR7N60, BR7N80
Keywords - BR4953 MOSFET specs
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