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BR4N60 Specs and Replacement

Type Designator: BR4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220

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BR4N60 datasheet

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 br4n60.pdf pdf_icon

BR4N60

BR4N60(BRCS4N60R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ... See More ⇒

Detailed specifications: 2SK2675, 2SK596, BR100N03, BR12N60, BR1N60, BR2N60, BR4145, BR4953, STP75NF75, BR50N06, BR50N10, BR70N06, BR75N08, BR75N75, BR7N60, BR7N80, BR80N06

Keywords - BR4N60 MOSFET specs

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