BR7N80 Specs and Replacement
Type Designator: BR7N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO220
BR7N80 substitution
- MOSFET ⓘ Cross-Reference Search
BR7N80 datasheet
br7n80.pdf
BR7N80(BRCS7N80R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low gate charge, Low Crss , Fast switching. / Applications DC/DC These devices are well su... See More ⇒
Detailed specifications: BR4953, BR4N60, BR50N06, BR50N10, BR70N06, BR75N08, BR75N75, BR7N60, IRFP260, BR80N06, BR80N08, BR80N10, BR80N75, BR8205, BR8N60, BRA2N60, BRA4N65
Keywords - BR7N80 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WML07N80M3 | 2SK1403A
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