BR80N10 Specs and Replacement
Type Designator: BR80N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 131 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220
BR80N10 substitution
- MOSFET ⓘ Cross-Reference Search
BR80N10 datasheet
br80n10.pdf
BR80N10(BRCS80N10R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig... See More ⇒
br80n08.pdf
BR80N08(BRCS80N08R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig... See More ⇒
br80n75.pdf
BR80N75(BRCS80N75R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig... See More ⇒
Detailed specifications: BR50N10, BR70N06, BR75N08, BR75N75, BR7N60, BR7N80, BR80N06, BR80N08, SKD502T, BR80N75, BR8205, BR8N60, BRA2N60, BRA4N65, BRA7N80, AON6788, CS2N60
Keywords - BR80N10 MOSFET specs
BR80N10 cross reference
BR80N10 equivalent finder
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BR80N10 substitution
BR80N10 replacement
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