BR80N75 PDF and Equivalents Search

 

BR80N75 Specs and Replacement

Type Designator: BR80N75

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

BR80N75 substitution

- MOSFET ⓘ Cross-Reference Search

 

BR80N75 datasheet

 ..1. Size:833K  blue-rocket-elect
br80n75.pdf pdf_icon

BR80N75

BR80N75(BRCS80N75R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig... See More ⇒

 9.1. Size:990K  blue-rocket-elect
br80n10.pdf pdf_icon

BR80N75

BR80N10(BRCS80N10R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig... See More ⇒

 9.2. Size:859K  blue-rocket-elect
br80n08.pdf pdf_icon

BR80N75

BR80N08(BRCS80N08R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig... See More ⇒

 9.3. Size:1333K  blue-rocket-elect
br80n06.pdf pdf_icon

BR80N75

... See More ⇒

Detailed specifications: BR70N06, BR75N08, BR75N75, BR7N60, BR7N80, BR80N06, BR80N08, BR80N10, K4145, BR8205, BR8N60, BRA2N60, BRA4N65, BRA7N80, AON6788, CS2N60, CS2N60F

Keywords - BR80N75 MOSFET specs

 BR80N75 cross reference

 BR80N75 equivalent finder

 BR80N75 pdf lookup

 BR80N75 substitution

 BR80N75 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.