BR8205 Datasheet and Replacement
Type Designator: BR8205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23-6
BR8205 substitution
BR8205 Datasheet (PDF)
br8205.pdf

BR8205 Rev.D Nov.-2016 DATA SHEET / Descriptions SOT23-6 N MOS N-channel Double MOSFET in a SOT23-6 Plastic Package. / Features R 2.5VDS(on)advanced trench technology to provide excellent RDS(on), low gate charge and operation with
Datasheet: BR75N08 , BR75N75 , BR7N60 , BR7N80 , BR80N06 , BR80N08 , BR80N10 , BR80N75 , TK10A60D , BR8N60 , BRA2N60 , BRA4N65 , BRA7N80 , AON6788 , CS2N60 , CS2N60F , JCS2N60V .
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