BRD17N10 PDF and Equivalents Search

 

BRD17N10 Specs and Replacement

Type Designator: BRD17N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO252

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BRD17N10 datasheet

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BRD17N10

BRD17N10(BRCS17N10D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , Low gate charge, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/... See More ⇒

Detailed specifications: BRB50N06 , BRB7N60 , BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 , BRD15P06 , 5N60 , BRD18N06 , BRD18P06 , BRD1N60 , BRD20N03 , BRD2N60 , BRD2N65 , BRD3N25 , BRD3N80 .

Keywords - BRD17N10 MOSFET specs

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