All MOSFET. BRD3N80 Datasheet

 

BRD3N80 Datasheet and Replacement


   Type Designator: BRD3N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO252
 

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BRD3N80 Datasheet (PDF)

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BRD3N80

BRD3N80(BRCS3N80D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

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 brd3n25.pdf pdf_icon

BRD3N80

BRD3N25(BRCS3N25D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

Datasheet: BRD17N10 , BRD18N06 , BRD18P06 , BRD1N60 , BRD20N03 , BRD2N60 , BRD2N65 , BRD3N25 , IRFZ24N , BRD4N60 , BRD4N65 , BRD50N03 , BRD50N06 , BRD5N50 , BRD5N60 , BRD630 , BRD6N60 .

History: NTMS4917N | NVB5860N | IRF460B | TK3R3A06PL | CS16N65FA9H | SI1302DL | KU2310Q

Keywords - BRD3N80 MOSFET datasheet

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