HUF76143P3
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF76143P3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 225
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
TO220AB
HUF76143P3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF76143P3
Datasheet (PDF)
6.1. Size:109K intersil
huf76143.pdf
HUF76143P3, HUF76143S3SData Sheet September 1999 File Number 4400.775A, 30V, 0.0055 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0055innovative UltraFET process.This advanced process technology Temperature Compensating
7.1. Size:300K fairchild semi
huf76145s3.pdf
HUF76145P3, HUF76145S3, HUF76145S3SData Sheet December 200375A, 30V, 0.0045 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045innovative UltraFET process. Temperature Compensating PSPICE ModelThis advanced process t
7.2. Size:225K fairchild semi
huf76145p3-s3s.pdf
HUF76145P3, HUF76145S3SData Sheet December 200175A, 30V, 0.0045 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0045innovative UltraFET process. Temperature Compensating PSPICE ModelThis advanced process technology
Datasheet: HUF76131SK8
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