BRF1N60 Specs and Replacement
Type Designator: BRF1N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO220F
BRF1N60 substitution
- MOSFET ⓘ Cross-Reference Search
BRF1N60 datasheet
brf1n60.pdf
BRF1N60(BRCS1N60F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi... See More ⇒
Detailed specifications: BRD70N03, BRF10N60, BRF10N65, BRF10N80, BRF12N60, BRF12N65, BRF13N50, BRF15N65, K2611, BRF20N50, BRF20N60, BRF2N60, BRF2N65, BRF2N70, BRF3N80, BRF4N60, BRF4N65
Keywords - BRF1N60 MOSFET specs
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