BRF1N60 Datasheet and Replacement
Type Designator: BRF1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO220F
BRF1N60 substitution
BRF1N60 Datasheet (PDF)
brf1n60.pdf
BRF1N60(BRCS1N60F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi
Datasheet: BRD70N03 , BRF10N60 , BRF10N65 , BRF10N80 , BRF12N60 , BRF12N65 , BRF13N50 , BRF15N65 , IRFZ48N , BRF20N50 , BRF20N60 , BRF2N60 , BRF2N65 , BRF2N70 , BRF3N80 , BRF4N60 , BRF4N65 .
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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