BRF6N60 Specs and Replacement
Type Designator: BRF6N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220F
BRF6N60 substitution
- MOSFET ⓘ Cross-Reference Search
BRF6N60 datasheet
brf6n60.pdf
BRF6N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features DS dv/dt Low RDS(ON), Low gate charge, Low Crss , Fast switching, Improved dv/dt capability. / App... See More ⇒
Detailed specifications: BRF2N60, BRF2N65, BRF2N70, BRF3N80, BRF4N60, BRF4N65, BRF4N80, BRF5N60, IRF3205, BRF6N70, BRF7N60, BRF7N65, BRF7N80, BRF8N60, BRF8N65, BRF8N80, CS1N60D
Keywords - BRF6N60 MOSFET specs
BRF6N60 cross reference
BRF6N60 equivalent finder
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BRF6N60 substitution
BRF6N60 replacement
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