All MOSFET. BRF6N60 Datasheet

 

BRF6N60 Datasheet and Replacement


   Type Designator: BRF6N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F
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BRF6N60 Datasheet (PDF)

 ..1. Size:933K  blue-rocket-elect
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BRF6N60

BRF6N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features DS dv/dt Low RDS(ON), Low gate charge, Low Crss , Fast switching, Improved dv/dt capability. / App

 9.1. Size:757K  blue-rocket-elect
 brf6n70.pdf pdf_icon

BRF6N60

BRF6N70(BRCS6N70F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features Fast switching, low on resistance, low gate charge, low reverse transfer capacitances. / Applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF520NL | NCEAP40T20AD | ME80N75T-G | JCS10N70S

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