CS2301 Specs and Replacement
Type Designator: CS2301
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT-23
CS2301 substitution
- MOSFET ⓘ Cross-Reference Search
CS2301 datasheet
cs2301 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2301 MOSFET(P-Channel) FEATURES renchFET Power MOSFET T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V ID Drain current -3 A PD Powe... See More ⇒
brcs2301ama.pdf
BRCS2301AMA Rev.B Apr.-2020 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON) Super high dense cell design for low RDS(ON),SOT-23 packag.Halogen-free Product. / Applications ... See More ⇒
Detailed specifications: CS1N60D, CS2N60D, CS4N60D, CS1N60, CS4N65, CS2300, CS8205, FS8205A, IRFB4227, CS2302, CS3401, YW3407, CS8205B, CS8205A, BRI1N60, BRI20N03, BRI2N60
Keywords - CS2301 MOSFET specs
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