CS2301 Datasheet and Replacement
Type Designator: CS2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT-23
CS2301 substitution
CS2301 Datasheet (PDF)
cs2301 sot-23.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2301 MOSFET(P-Channel) FEATURES renchFET Power MOSFET TMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 VID Drain current -3 A PD Powe
brcs2301ama.pdf

BRCS2301AMA Rev.B Apr.-2020 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 packag.Halogen-free Product. / Applications
brcs2301emf.pdf

BRCS2301EMF Rev.A Aug.-2019 DATA SHEET / Descriptions SOT23-6 P MOS P- CHANNEL MOSFET in a SOT23-6 Plastic Package. / Features R 110m,VGS=-4.5V DS(ON)R 150m,VGS=-2.5V DS(ON)HF Product. / Applications Primarily the display screen drive applications.
brcs2301ma.pdf

BRCS2301MA Rev.C May.-2020 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. HF product. / Applications
Datasheet: CS1N60D , CS2N60D , CS4N60D , CS1N60 , CS4N65 , CS2300 , CS8205 , FS8205A , AON6414A , CS2302 , CS3401 , YW3407 , CS8205B , CS8205A , BRI1N60 , BRI20N03 , BRI2N60 .
History: 2SK3018LT1
Keywords - CS2301 MOSFET datasheet
CS2301 cross reference
CS2301 equivalent finder
CS2301 lookup
CS2301 substitution
CS2301 replacement
History: 2SK3018LT1



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