ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2301 MOSFET(P-Channel) FEATURES renchFET Power MOSFET TMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 VID Drain current -3 A PD Powe

BRCS2301AMA Rev.B Apr.-2020 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 packag.Halogen-free Product. / Applications

BRCS2301EMF Rev.A Aug.-2019 DATA SHEET / Descriptions SOT23-6 P MOS P- CHANNEL MOSFET in a SOT23-6 Plastic Package. / Features R 110m,VGS=-4.5V DS(ON)R 150m,VGS=-2.5V DS(ON)HF Product. / Applications Primarily the display screen drive applications.

BRCS2301MA Rev.C May.-2020 DATA SHEET / Descriptions SOT-23 P MOS P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. HF product. / Applications