CS8205B MOSFET Datasheet: N-Ch, 19.5V, 6A. Full specification with pinout and replacement list

CS8205B Specs and Replacement

Type Designator: CS8205B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 19.5 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOT-23-6

CS8205B substitution

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CS8205B datasheet

..1. Size:278K can-sheng
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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6 VDS=19.5V,ID=6A RDS(ON)... See More ⇒

8.1. Size:289K toshiba
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TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current IDSS = 10 ... See More ⇒

8.2. Size:292K can-sheng
cs8205a 6a sot-23-6.pdf pdf_icon

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com 8205A Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 27.5 @ VG S = 4.0V 20V 6A S urface Mount Package. 37.5@V G S = 2.5V D1 D2 - ... See More ⇒

8.3. Size:387K can-sheng
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