All MOSFET. CS8205B Datasheet

 

CS8205B Datasheet and Replacement


   Type Designator: CS8205B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 19.5 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT-23-6
 

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CS8205B Datasheet (PDF)

 ..1. Size:278K  can-sheng
 cs8205b.pdf pdf_icon

CS8205B

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6VDS=19.5V,ID=6A RDS(ON)

 8.1. Size:289K  toshiba
 tpcs8205.pdf pdf_icon

CS8205B

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: IDSS = 10

 8.2. Size:292K  can-sheng
 cs8205a 6a sot-23-6.pdf pdf_icon

CS8205B

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com8205ADual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.27.5 @ VG S = 4.0V20V 6A S urface Mount Package.37.5@V G S = 2.5VD1 D2-

 8.3. Size:387K  can-sheng
 cs8205a sot-23-6.pdf pdf_icon

CS8205B

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Datasheet: CS4N65 , CS2300 , CS8205 , FS8205A , CS2301 , CS2302 , CS3401 , YW3407 , IRFP250N , CS8205A , BRI1N60 , BRI20N03 , BRI2N60 , BRI2N65 , BRI3N25 , BRI3N80 , BRI4N60 .

History: IRLR3714Z | SRC60R064S | STP13N95K3 | NTH4L040N65S3F | KHB4D5N60P | NTHD3101FT3 | IRFF9112

Keywords - CS8205B MOSFET datasheet

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