BRI3N80 Datasheet and Replacement
Type Designator: BRI3N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO251
BRI3N80 substitution
BRI3N80 Datasheet (PDF)
bri3n80.pdf
BRI3N80(BRCS3N80I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef
bri3n25.pdf
BRI3N25(BRCS3N25I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high ef
Datasheet: YW3407 , CS8205B , CS8205A , BRI1N60 , BRI20N03 , BRI2N60 , BRI2N65 , BRI3N25 , AO3400 , BRI4N60 , BRI4N65 , BRI50N03 , BRI5N50 , BRI5N60 , BRI630 , BRI6N70 , BRI70N03 .
Keywords - BRI3N80 MOSFET datasheet
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