BRS1N80 Datasheet and Replacement
Type Designator: BRS1N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: TO92
BRS1N80 substitution
BRS1N80 Datasheet (PDF)
brs1n80.pdf
BRS1N80(CS1N80S) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
brs1n60.pdf
BRS1N60(CS1N60S) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
brs1n70.pdf
BRS1N70(CS1N70S) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
Datasheet: BRI630 , BRI6N70 , BRI70N03 , BRL2N60 , BRM501D , BRP50N20 , BRS1N60 , BRS1N70 , IRFB3607 , BRS3N25 , BRU20N50 , IRFB830 , IRFH3205 , SI2306 , VTI630 , VTI630F , VTI634F .
History: BRP50N20
Keywords - BRS1N80 MOSFET datasheet
BRS1N80 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BRP50N20
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