BRS1N80 MOSFET Datasheet: N-Ch, 800V, 1A. Full specification with pinout and replacement list

BRS1N80 Specs and Replacement

Type Designator: BRS1N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm

Package: TO92

BRS1N80 substitution

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BRS1N80 datasheet

..1. Size:249K blue-rocket-elect
brs1n80.pdf pdf_icon

BRS1N80(CS1N80S) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒

9.1. Size:243K blue-rocket-elect
brs1n60.pdf pdf_icon

BRS1N60(CS1N60S) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25... See More ⇒

9.2. Size:228K blue-rocket-elect
brs1n70.pdf pdf_icon

BRS1N70(CS1N70S) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒

Detailed specifications: BRI630, BRI6N70, BRI70N03, BRL2N60, BRM501D, BRP50N20, BRS1N60, BRS1N70, K4145, BRS3N25, BRU20N50, IRFB830, IRFH3205, SI2306, VTI630, VTI630F, VTI634F