All MOSFET. VTI630 Datasheet

 

VTI630 Datasheet and Replacement


   Type Designator: VTI630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220
 

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VTI630 Datasheet (PDF)

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VTI630

VTI630(BRCS630R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3,Typical RDS(on)=0.3,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC

 0.1. Size:770K  blue-rocket-elect
 vti630f.pdf pdf_icon

VTI630

VTI630F(BRCS630F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.3,Typical RDS(on)=0.3,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC

 9.1. Size:1055K  blue-rocket-elect
 vti634f.pdf pdf_icon

VTI630

VTI634F(BRCS634F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.38,Typical RDS(on)=0.38,low intrinsic capacitance Ciss, fast switching. / Applications ,DC-DC SMPSD

 9.2. Size:200K  foshan
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VTI630

VTI634(CS634) N-Channel MOSFET/N MOS :,DC-DC Purpose: SMPSDC-DC converters. : RDS(on)0.38, Features: Typical RDS(on)=0.38,low intrinsic capacitance C , fast switching. iss/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 250 V D

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - VTI630 MOSFET datasheet

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