VTI630F
MOSFET. Datasheet pdf. Equivalent
Type Designator: VTI630F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO220F
VTI630F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VTI630F
Datasheet (PDF)
..1. Size:770K blue-rocket-elect
vti630f.pdf 
VTI630F(BRCS630F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.3,Typical RDS(on)=0.3,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC
8.1. Size:1103K blue-rocket-elect
vti630.pdf
VTI630(BRCS630R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on) 0.3,Typical RDS(on)=0.3,low intrinsic capacitance Ciss, fast switching. / Applications ,,DC-DC
9.1. Size:1055K blue-rocket-elect
vti634f.pdf
VTI634F(BRCS634F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features RDS(on) 0.38,Typical RDS(on)=0.38,low intrinsic capacitance Ciss, fast switching. / Applications ,DC-DC SMPSD
9.2. Size:200K foshan
vti634.pdf
VTI634(CS634) N-Channel MOSFET/N MOS :,DC-DC Purpose: SMPSDC-DC converters. : RDS(on)0.38, Features: Typical RDS(on)=0.38,low intrinsic capacitance C , fast switching. iss/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 250 V D
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